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| NTE85 Silicon NPN Transistor General Purpose Amplifier Applications: D Medium Power Amplifiers D Class B Audio Outputs D Hi-Fi Drivers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Note 2. These ratings are based on a maximum junction temperature of 150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min 30 50 5.0 - - Typ - - - - - Max - - - 100 100 Unit V V V nA nA Collector-Emitter Breakdown V(BR)CEO IC = 10mA, IB = 0, Note 3 Voltage Collector-Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 Emitter-Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current V(BR)EBO IE = 100A, IC = 0 ICBO IEBO VCB = 20V, IE = 0 VBE = 3V, IC = 0 Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2% Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter DC Current Gain Base-Emitter ON Voltage Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product Collector-Base Capacitance Symbol hFE VBE(on) VCE(sat) fT Ccb Test Conditions VCE = 2V, IC = 50mA, Note 3 IC = 100mA, VCE = 2V, Note 3 IC = 100mA, IB = 5mA, Note 3 IC = 50mA, VCE = 2V VCB = 10V, IE = 0, f = 1MHz Min 100 0.5 - 100 - Typ - - - - - Max 300 1.0 0.6 - 12 V V MHz pF Unit Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2% .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max ECB .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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